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 2N3442 High-Power Industrial Transistors
NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches.
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* Collector -Emitter Sustaining Voltage - VCEO(sus) = 140 Vdc (Min) * Excellent Second Breakdown Capability * Pb-Free Package is Available*
MAXIMUM RATINGS (Note 1)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current - Continuous - Peak - Continuous - Peak Symbol VCEO VCB VEB IC IB PD TJ, Tstg Value 140 160 7.0 10 15 7.0 - 117 0.67 -65 to +200 Unit Vdc Vdc Vdc Adc Adc W W/_C _C
10 AMPERE POWER TRANSISTOR NPN SILICON 140 VOLTS - 117 WATTS
TO-204AA (TO-3) CASE 1-07 STYLE 1
Total Device Dissipation @ TC = 25_C Derate above 25_C (Note 2) Operating and Storage Junction Temperature Range
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Symbol RqJC Max 1.17 Unit _C/W 2N3442G AYWW MEX
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data. 2. This data guaranteed in addition to JEDEC registered data. 2N3442 G A Y WW MEX
= Device Code = Pb-Free Package = Assembly Location = Year = Work Week = Country of Origin
ORDERING INFORMATION
Device 2N3442 2N3442G *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2006
Package TO-204 TO-204 (Pb-Free)
Shipping 100 Units / Tray 100 Units / Tray
1
February, 2006 - Rev. 11
Publication Order Number: 2N3442/D
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3. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%. 4. fT = |hfe| * ftest DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (Note 3) OFF CHARACTERISTICS
PD /PD(MAX), POWER DISSIPATION (NORMALIZED)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Small-Signal Current Gain (IC = 2.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
Current-Gain - Bandwidth Product (Note 4) (IC = 2.0 Adc, VCE = 4.0 Vdc, ftest = 40 kHz)
Base-Emitter On Voltage (IC = 10 Adc, VCE = 4.0 Vdc)
Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 2.0 Adc)
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc)
Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0)
Collector Cutoff Current (VCE = 140 Vdc, VBE(off) = 1.5 Vdc) (VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
Collector Cutoff Current (VCE = 140 Vdc, IB = 0)
Collector-Emitter Sustaining Voltage (IC = 200 mAdc, IB = 0)
Characteristic
0.2
0.4
0.6
0.8
1.0
0
0
25
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50 75 100 125 150 TC, CASE TEMPERATURE (C)
Figure 1. Power Derating
2N3442
2 VCEO(sus) Symbol VCE(sat) VBE(on) ICEO IEBO ICEX hFE hfe fT 175 Min 140 20 7.5 200 12 80 - - - - - - Max 200 5.7 5.0 5.0 5.0 30 72 70 - - - mAdc mAdc mAdc Unit kHz - Vdc Vdc Vdc -
2N3442
ACTIVE REGION SAFE OPERATING AREA INFORMATION
20 10 ms IC, COLLECTOR CURRENT (AMP) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 2.0 3.0 TJ = 200C dc 30 ms 50 ms 100 ms 1.0 ms 100 ms
CURRENT LIMIT THERMAL LIMIT @ TC = 25C SINGLE PULSE SECOND BREAKDOWN LIMIT
There are two limitations on the power-handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TJ(pk) = 200_C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
200
50 70 100 5.0 7.0 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. 2N3442
400 TJ = 150C 200 hFE , DC CURRENT GAIN 100 60 40 20 10 6.0 4.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 25C -55 C VCE = 4.0 V
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.4 1.2 1.0 0.8 0.6 0.4 0.2 TJ = 25C 0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) 500 1.0 k 2.0 k IC = 1.0 A 2.0 A 4.0 A 8.0 A
Figure 3. DC Current Gain
Figure 4. Collector-Saturation Region
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2N3442
PACKAGE DIMENSIONS
TO-204 (TO-3) CASE 1-07 ISSUE Z
A N C -T- E D
2 PL SEATING PLANE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77
K
M
0.13 (0.005) U V
2
TQ
M
Y
M
L G
1
-Y-
H
B
-Q- 0.13 (0.005)
M
TY
M
STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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4
2N3442/D


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